Growth of high purity InGaAs using different indium sources

N. Pan; M. H. Kim; M. S. Feng; G. E. Stillman

doi:10.1016/0022-0248(89)90115-2

Growth of high purity InGaAs using different indium sources

N. Pan, M. H. Kim, M. S. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ₃₀₀ = 11,500±400 cm² V·s, n₃₀₀ = (3.8±1.9)× 10¹⁴ cm^-3, μ₇₇ = 55,200±3,800 cm² V·s, n₇₇ = (3.4±1.8)×10¹⁴ cm^-3.

Original language	English (US)
Pages (from-to)	829-833
Number of pages	5
Journal	Journal of Crystal Growth
Volume	94
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(89)90115-2
State	Published - Apr 1989

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(89)90115-2

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title = "Growth of high purity InGaAs using different indium sources",

abstract = "A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ300 = 11,500±400 cm2 V·s, n300 = (3.8±1.9)× 1014 cm-3, μ77 = 55,200±3,800 cm2 V·s, n77 = (3.4±1.8)×1014 cm-3.",

author = "N. Pan and Kim, {M. H.} and Feng, {M. S.} and Stillman, {G. E.}",

note = "Funding Information: Technical discussions with N. Tabatabaie were greatly appreciated. The authors wish to thank B.L. Payne for assistance in the preparation of this manuscript. The research was supported by the National Science Foundation under Contract NSF-DMR 83-16981. The Center for Compound Semiconductor Microelectronics is supported by NSF CDR 85-22666.",

year = "1989",

month = apr,

doi = "10.1016/0022-0248(89)90115-2",

language = "English (US)",

volume = "94",

pages = "829--833",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Growth of high purity InGaAs using different indium sources

AU - Pan, N.

AU - Kim, M. H.

AU - Feng, M. S.

AU - Stillman, G. E.

N1 - Funding Information: Technical discussions with N. Tabatabaie were greatly appreciated. The authors wish to thank B.L. Payne for assistance in the preparation of this manuscript. The research was supported by the National Science Foundation under Contract NSF-DMR 83-16981. The Center for Compound Semiconductor Microelectronics is supported by NSF CDR 85-22666.

PY - 1989/4

Y1 - 1989/4

N2 - A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ300 = 11,500±400 cm2 V·s, n300 = (3.8±1.9)× 1014 cm-3, μ77 = 55,200±3,800 cm2 V·s, n77 = (3.4±1.8)×1014 cm-3.

AB - A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ300 = 11,500±400 cm2 V·s, n300 = (3.8±1.9)× 1014 cm-3, μ77 = 55,200±3,800 cm2 V·s, n77 = (3.4±1.8)×1014 cm-3.

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DO - 10.1016/0022-0248(89)90115-2

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SN - 0022-0248

VL - 94

SP - 829

EP - 833

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Growth of high purity InGaAs using different indium sources

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