Growth of high purity InGaAs using different indium sources

N. Pan, M. H. Kim, M. S. Feng, G. E. Stillman

Research output: Contribution to journalArticlepeer-review


A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ300 = 11,500±400 cm2 V·s, n300 = (3.8±1.9)× 1014 cm-3, μ77 = 55,200±3,800 cm2 V·s, n77 = (3.4±1.8)×1014 cm-3.

Original languageEnglish (US)
Pages (from-to)829-833
Number of pages5
JournalJournal of Crystal Growth
Issue number4
StatePublished - Apr 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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