Abstract

A single-crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at 550 C by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550 C. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer.

Original languageEnglish (US)
Pages (from-to)792-795
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - May 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Growth of GaAs on Si using ionized cluster beam technique'. Together they form a unique fingerprint.

  • Cite this