Growth of F-doped BaBiO3 thin films via flow-limited field-injection electrostatic spraying toward experimental realization of wide bandgap topological insulator

Riley Vesto; Hyungsoo Choi; Kyekyoon Kim

doi:10.1016/j.scriptamat.2025.116656

Growth of F-doped BaBiO₃ thin films via flow-limited field-injection electrostatic spraying toward experimental realization of wide bandgap topological insulator

Riley Vesto, Hyungsoo Choi, Kyekyoon Kim

Research output: Contribution to journal › Article › peer-review

Abstract

F-doped BaBiO₃ (BBOF), an oxide perovskite predicted theoretically as a wide bandgap topological insulator, is produced in solution phase via flow-limited field-injection electrostatic spraying. BBOF demonstrates insulative properties in optical measurements. Raman spectra indicate the suppression of breathing distortion in BBO due to the electron donation from the substituted fluorine. The F content (α) in the BaBiO_3-αF_α films measured by X-ray photoemission spectroscopy is 0.86. The high F substitution realized in this study contributes to a significant Fermi-level shift, transforming BBO from a high absorption to a transparent phase.

Original language	English (US)
Article number	116656
Journal	Scripta Materialia
Volume	262
DOIs	https://doi.org/10.1016/j.scriptamat.2025.116656
State	Published - Jun 1 2025

Keywords

Defects in semiconductors
Electronic structure
Perovskite
Spray processing

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Online availability

10.1016/j.scriptamat.2025.116656

Library availability

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Cite this

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title = "Growth of F-doped BaBiO3 thin films via flow-limited field-injection electrostatic spraying toward experimental realization of wide bandgap topological insulator",

abstract = "F-doped BaBiO3 (BBOF), an oxide perovskite predicted theoretically as a wide bandgap topological insulator, is produced in solution phase via flow-limited field-injection electrostatic spraying. BBOF demonstrates insulative properties in optical measurements. Raman spectra indicate the suppression of breathing distortion in BBO due to the electron donation from the substituted fluorine. The F content (α) in the BaBiO3-αFα films measured by X-ray photoemission spectroscopy is 0.86. The high F substitution realized in this study contributes to a significant Fermi-level shift, transforming BBO from a high absorption to a transparent phase.",

keywords = "Defects in semiconductors, Electronic structure, Perovskite, Spray processing",

author = "Riley Vesto and Hyungsoo Choi and Kyekyoon Kim",

note = "This work was financially supported by the Andrew Yang Award (Grant No. UIUC-933000-633144) and by the Kim-Fund of the University of Illinois (Grant No. UIUC-933008-633134). The material characterization work was carried out in part in the Materials Research Laboratory Central Research Facilities, University of Illinois. This work was supported by the Andrew T. Yang Award (Grant No. UIUC-933000-633144) and Kim Fund of the University of Illinois (Grant No. UIUC-933008-633134).",

year = "2025",

month = jun,

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doi = "10.1016/j.scriptamat.2025.116656",

language = "English (US)",

volume = "262",

journal = "Scripta Materialia",

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AU - Vesto, Riley

AU - Choi, Hyungsoo

AU - Kim, Kyekyoon

N1 - This work was financially supported by the Andrew Yang Award (Grant No. UIUC-933000-633144) and by the Kim-Fund of the University of Illinois (Grant No. UIUC-933008-633134). The material characterization work was carried out in part in the Materials Research Laboratory Central Research Facilities, University of Illinois. This work was supported by the Andrew T. Yang Award (Grant No. UIUC-933000-633144) and Kim Fund of the University of Illinois (Grant No. UIUC-933008-633134).

PY - 2025/6/1

Y1 - 2025/6/1

N2 - F-doped BaBiO3 (BBOF), an oxide perovskite predicted theoretically as a wide bandgap topological insulator, is produced in solution phase via flow-limited field-injection electrostatic spraying. BBOF demonstrates insulative properties in optical measurements. Raman spectra indicate the suppression of breathing distortion in BBO due to the electron donation from the substituted fluorine. The F content (α) in the BaBiO3-αFα films measured by X-ray photoemission spectroscopy is 0.86. The high F substitution realized in this study contributes to a significant Fermi-level shift, transforming BBO from a high absorption to a transparent phase.

AB - F-doped BaBiO3 (BBOF), an oxide perovskite predicted theoretically as a wide bandgap topological insulator, is produced in solution phase via flow-limited field-injection electrostatic spraying. BBOF demonstrates insulative properties in optical measurements. Raman spectra indicate the suppression of breathing distortion in BBO due to the electron donation from the substituted fluorine. The F content (α) in the BaBiO3-αFα films measured by X-ray photoemission spectroscopy is 0.86. The high F substitution realized in this study contributes to a significant Fermi-level shift, transforming BBO from a high absorption to a transparent phase.

KW - Defects in semiconductors

KW - Electronic structure

KW - Perovskite

KW - Spray processing

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