Growth of CoSi 2 on Si(001) by reactive deposition epitaxy

C. W. Lim; C. S. Shin; D. Gall; J. M. Zuo; I. Petrov; J. E. Greene

doi:10.1063/1.1774263

Growth of CoSi ₂ on Si(001) by reactive deposition epitaxy

C. W. Lim, C. S. Shin, D. Gall, J. M. Zuo, I. Petrov, J. E. Greene

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Abstract

CaF ₂-structure CoSi ₂ layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi ₂ layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi ₂ formed at 600°C. However, in the case of RDE, CoSi ₂ formation occurred during Co deposition while for SPG, Co was deposited at 25°C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi ₂ layers are epitaxial with a cube-on-cube relationship, (001) _Cosi2∥(001) _Si and [100] _CoSi2∥[100] _Si. In contrast, SPG films are polycrystalline with an average grain size of ≃1000 Å and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases - from orthorhombic Co ₂Si to cubic CoSi to CoSi ₂ - during SPG results in poly crystalline layers with a complex texture.

Original language	English (US)
Article number	044909
Journal	Journal of Applied Physics
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.1774263
State	Published - Feb 15 2005

ASJC Scopus subject areas

General Physics and Astronomy

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@article{b5a4e05ec7cc4f5aa800aaadd03595a8,

title = "Growth of CoSi 2 on Si(001) by reactive deposition epitaxy",

abstract = "CaF 2-structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600°C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25°C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship, (001) Cosi2∥(001) Si and [100] CoSi2∥[100] Si. In contrast, SPG films are polycrystalline with an average grain size of ≃1000 {\AA} and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases - from orthorhombic Co 2Si to cubic CoSi to CoSi 2 - during SPG results in poly crystalline layers with a complex texture.",

author = "Lim, {C. W.} and Shin, {C. S.} and D. Gall and Zuo, {J. M.} and I. Petrov and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the U.S. Department of Energy (DOE), under Grant No. DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (FS-MRL). We also appreciate the use of the DOE supported MRL Center for Microanalysis of Materials (CMM) at the University of Illinois. C.W. Lim is a recipient of Ludo Frevel Crystallography Scholarship Award funded by the International Centre for Diffraction Data (ICDD).",

year = "2005",

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doi = "10.1063/1.1774263",

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T1 - Growth of CoSi 2 on Si(001) by reactive deposition epitaxy

AU - Lim, C. W.

AU - Shin, C. S.

AU - Gall, D.

AU - Zuo, J. M.

AU - Petrov, I.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the U.S. Department of Energy (DOE), under Grant No. DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (FS-MRL). We also appreciate the use of the DOE supported MRL Center for Microanalysis of Materials (CMM) at the University of Illinois. C.W. Lim is a recipient of Ludo Frevel Crystallography Scholarship Award funded by the International Centre for Diffraction Data (ICDD).

PY - 2005/2/15

Y1 - 2005/2/15

N2 - CaF 2-structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600°C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25°C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship, (001) Cosi2∥(001) Si and [100] CoSi2∥[100] Si. In contrast, SPG films are polycrystalline with an average grain size of ≃1000 Å and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases - from orthorhombic Co 2Si to cubic CoSi to CoSi 2 - during SPG results in poly crystalline layers with a complex texture.

AB - CaF 2-structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600°C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25°C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship, (001) Cosi2∥(001) Si and [100] CoSi2∥[100] Si. In contrast, SPG films are polycrystalline with an average grain size of ≃1000 Å and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases - from orthorhombic Co 2Si to cubic CoSi to CoSi 2 - during SPG results in poly crystalline layers with a complex texture.

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