Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

D. J.H. Lambert; J. J. Huang; B. S. Shelton; M. M. Wong; U. Chowdhury; T. G. Zhu; H. K. Kwon; Z. Liliental-Weber; M. Benarama; M. Feng; R. D. Dupuis

doi:10.1016/S0022-0248(00)00808-3

Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

D. J.H. Lambert
, J. J. Huang
, B. S. Shelton
, M. M. Wong
, U. Chowdhury
, T. G. Zhu
, H. K. Kwon
, Z. Liliental-Weber
, M. Benarama
, M. Feng
, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The `emitter-up' structures are grown on (0 0 0 1) sapphire substrates. Common-emitter characteristics and Gummel plots were measured on 120×120 μm² devices and useable DC current gains of β approximately 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices.

Original language	English (US)
Pages (from-to)	730-733
Number of pages	4
Journal	Journal of Crystal Growth
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00808-3
State	Published - Dec 2000

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/S0022-0248(00)00808-3

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@article{7ed511fae70e49de88dbcf8fe7bf7cff,

title = "Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition",

abstract = "The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The `emitter-up' structures are grown on (0 0 0 1) sapphire substrates. Common-emitter characteristics and Gummel plots were measured on 120×120 μm2 devices and useable DC current gains of β approximately 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices.",

author = "Lambert, \{D. J.H.\} and Huang, \{J. J.\} and Shelton, \{B. S.\} and Wong, \{M. M.\} and U. Chowdhury and Zhu, \{T. G.\} and Kwon, \{H. K.\} and Z. Liliental-Weber and M. Benarama and M. Feng and Dupuis, \{R. D.\}",

note = "This work was partially sponsored by the Office of Naval Research under grants N00014-95-1-1302 and N000014-99-1-0479 (J.C. Zolper), and by the NSF STC program under grant CHE-89-20120.",

year = "2000",

month = dec,

doi = "10.1016/S0022-0248(00)00808-3",

language = "English (US)",

volume = "221",

pages = "730--733",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

AU - Lambert, D. J.H.

AU - Huang, J. J.

AU - Shelton, B. S.

AU - Wong, M. M.

AU - Chowdhury, U.

AU - Zhu, T. G.

AU - Kwon, H. K.

AU - Liliental-Weber, Z.

AU - Benarama, M.

AU - Feng, M.

AU - Dupuis, R. D.

N1 - This work was partially sponsored by the Office of Naval Research under grants N00014-95-1-1302 and N000014-99-1-0479 (J.C. Zolper), and by the NSF STC program under grant CHE-89-20120.

PY - 2000/12

Y1 - 2000/12

N2 - The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The `emitter-up' structures are grown on (0 0 0 1) sapphire substrates. Common-emitter characteristics and Gummel plots were measured on 120×120 μm2 devices and useable DC current gains of β approximately 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices.

AB - The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The `emitter-up' structures are grown on (0 0 0 1) sapphire substrates. Common-emitter characteristics and Gummel plots were measured on 120×120 μm2 devices and useable DC current gains of β approximately 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices.

UR - https://www.scopus.com/pages/publications/18344400601

UR - https://www.scopus.com/pages/publications/18344400601#tab=citedBy

U2 - 10.1016/S0022-0248(00)00808-3

DO - 10.1016/S0022-0248(00)00808-3

M3 - Article

AN - SCOPUS:18344400601

SN - 0022-0248

VL - 221

SP - 730

EP - 733

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Abstract

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