Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

D. J.H. Lambert, J. J. Huang, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, Z. Liliental-Weber, M. Benarama, M. Feng, R. D. Dupuis

Research output: Contribution to journalArticle

Abstract

The growth and properties of AlGaN/GaN heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described. The `emitter-up' structures are grown on (0 0 0 1) sapphire substrates. Common-emitter characteristics and Gummel plots were measured on 120×120 μm2 devices and useable DC current gains of β approximately 8-14 were achieved at room temperature. The resistance of the base was a limiting factor in high-current operation of these devices.

Original languageEnglish (US)
Pages (from-to)730-733
Number of pages4
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
StatePublished - Dec 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Lambert, D. J. H., Huang, J. J., Shelton, B. S., Wong, M. M., Chowdhury, U., Zhu, T. G., Kwon, H. K., Liliental-Weber, Z., Benarama, M., Feng, M., & Dupuis, R. D. (2000). Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition. Journal of Crystal Growth, 221(1-4), 730-733. https://doi.org/10.1016/S0022-0248(00)00808-3