Growth of a novel InAs-GaAs strained layer superlattice on InP

M. C. Tamargo; R. Hull; L. H. Greene; J. R. Hayes; A. Y. Cho

doi:10.1063/1.95542

Growth of a novel InAs-GaAs strained layer superlattice on InP

M. C. Tamargo, R. Hull, L. H. Greene, J. R. Hayes, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

Abstract

Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

Original language	English (US)
Pages (from-to)	569-571
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1063/1.95542
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.95542

Library availability

Discover UIUC Full Text

Cite this

@article{f8f574bb793640529ed95aca8fff6f2e,

title = "Growth of a novel InAs-GaAs strained layer superlattice on InP",

abstract = "Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.",

author = "Tamargo, \{M. C.\} and R. Hull and Greene, \{L. H.\} and Hayes, \{J. R.\} and Cho, \{A. Y.\}",

year = "1985",

doi = "10.1063/1.95542",

language = "English (US)",

volume = "46",

pages = "569--571",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Growth of a novel InAs-GaAs strained layer superlattice on InP

AU - Tamargo, M. C.

AU - Hull, R.

AU - Greene, L. H.

AU - Hayes, J. R.

AU - Cho, A. Y.

PY - 1985

Y1 - 1985

N2 - Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

AB - Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

UR - https://www.scopus.com/pages/publications/21544457365

UR - https://www.scopus.com/inward/citedby.url?scp=21544457365&partnerID=8YFLogxK

U2 - 10.1063/1.95542

DO - 10.1063/1.95542

M3 - Article

AN - SCOPUS:21544457365

SN - 0003-6951

VL - 46

SP - 569

EP - 571

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Growth of a novel InAs-GaAs strained layer superlattice on InP

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this