Growth of a novel InAs-GaAs strained layer superlattice on InP

M. C. Tamargo, R. Hull, L. H. Greene, J. R. Hayes, A. Y. Cho

Research output: Contribution to journalArticle

Abstract

Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

Original languageEnglish (US)
Pages (from-to)569-571
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number6
DOIs
StatePublished - Dec 1 1985

Fingerprint

x ray scattering
buffers
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tamargo, M. C., Hull, R., Greene, L. H., Hayes, J. R., & Cho, A. Y. (1985). Growth of a novel InAs-GaAs strained layer superlattice on InP. Applied Physics Letters, 46(6), 569-571. https://doi.org/10.1063/1.95542

Growth of a novel InAs-GaAs strained layer superlattice on InP. / Tamargo, M. C.; Hull, R.; Greene, L. H.; Hayes, J. R.; Cho, A. Y.

In: Applied Physics Letters, Vol. 46, No. 6, 01.12.1985, p. 569-571.

Research output: Contribution to journalArticle

Tamargo, MC, Hull, R, Greene, LH, Hayes, JR & Cho, AY 1985, 'Growth of a novel InAs-GaAs strained layer superlattice on InP', Applied Physics Letters, vol. 46, no. 6, pp. 569-571. https://doi.org/10.1063/1.95542
Tamargo MC, Hull R, Greene LH, Hayes JR, Cho AY. Growth of a novel InAs-GaAs strained layer superlattice on InP. Applied Physics Letters. 1985 Dec 1;46(6):569-571. https://doi.org/10.1063/1.95542
Tamargo, M. C. ; Hull, R. ; Greene, L. H. ; Hayes, J. R. ; Cho, A. Y. / Growth of a novel InAs-GaAs strained layer superlattice on InP. In: Applied Physics Letters. 1985 ; Vol. 46, No. 6. pp. 569-571.
@article{f8f574bb793640529ed95aca8fff6f2e,
title = "Growth of a novel InAs-GaAs strained layer superlattice on InP",
abstract = "Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.",
author = "Tamargo, {M. C.} and R. Hull and Greene, {L. H.} and Hayes, {J. R.} and Cho, {A. Y.}",
year = "1985",
month = "12",
day = "1",
doi = "10.1063/1.95542",
language = "English (US)",
volume = "46",
pages = "569--571",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Growth of a novel InAs-GaAs strained layer superlattice on InP

AU - Tamargo, M. C.

AU - Hull, R.

AU - Greene, L. H.

AU - Hayes, J. R.

AU - Cho, A. Y.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

AB - Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

UR - http://www.scopus.com/inward/record.url?scp=21544457365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544457365&partnerID=8YFLogxK

U2 - 10.1063/1.95542

DO - 10.1063/1.95542

M3 - Article

AN - SCOPUS:21544457365

VL - 46

SP - 569

EP - 571

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -