Growth of a novel InAs-GaAs strained layer superlattice on InP

M. C. Tamargo, R. Hull, L. H. Greene, J. R. Hayes, A. Y. Cho

Research output: Contribution to journalArticle

Abstract

Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x-ray scattering and transmission electron microscopy studies were used to characterize the layers.

Original languageEnglish (US)
Pages (from-to)569-571
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number6
DOIs
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tamargo, M. C., Hull, R., Greene, L. H., Hayes, J. R., & Cho, A. Y. (1985). Growth of a novel InAs-GaAs strained layer superlattice on InP. Applied Physics Letters, 46(6), 569-571. https://doi.org/10.1063/1.95542