Growth mechanism and surface atomic structure of AgInSe 2

Pamela Pea Martin; Angus A. Rockett; Joseph Lyding

doi:10.1116/1.4728160

Growth mechanism and surface atomic structure of AgInSe ₂

Pamela Pea Martin, Angus A. Rockett, Joseph Lyding

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of (112)A-oriented AgInSe ₂ on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was ∼10 ¹⁰ cm ². Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.

Original language	English (US)
Article number	04D115
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4728160
State	Published - Jul 2012

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.4728160

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Cite this

@article{a7faf08daa0e45d18c2a551431a172b1,

title = "Growth mechanism and surface atomic structure of AgInSe 2 ",

abstract = "The growth of (112)A-oriented AgInSe 2 on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was ∼10 10 cm 2. Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.",

author = "{Pea Martin}, Pamela and Rockett, {Angus A.} and Joseph Lyding",

note = "Funding Information: A portion of the work was carried out in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois. The authors gratefully acknowledge the support of the International Institute for Carbon-Neutral Energy Research (ICNER) sponsored by the Japanese Ministry of Education, Culture, Sports, Science and Technology. 2",

year = "2012",

month = jul,

doi = "10.1116/1.4728160",

language = "English (US)",

volume = "30",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Growth mechanism and surface atomic structure of AgInSe 2

AU - Pea Martin, Pamela

AU - Rockett, Angus A.

AU - Lyding, Joseph

N1 - Funding Information: A portion of the work was carried out in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois. The authors gratefully acknowledge the support of the International Institute for Carbon-Neutral Energy Research (ICNER) sponsored by the Japanese Ministry of Education, Culture, Sports, Science and Technology. 2

PY - 2012/7

Y1 - 2012/7

N2 - The growth of (112)A-oriented AgInSe 2 on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was ∼10 10 cm 2. Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.

AB - The growth of (112)A-oriented AgInSe 2 on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was ∼10 10 cm 2. Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.

UR - http://www.scopus.com/inward/record.url?scp=84863641335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863641335&partnerID=8YFLogxK

U2 - 10.1116/1.4728160

DO - 10.1116/1.4728160

M3 - Article

AN - SCOPUS:84863641335

SN - 0734-2101

VL - 30

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

M1 - 04D115

ER -