Growth mechanism and surface atomic structure of AgInSe 2

Pamela Pea Martin, Angus Rockett, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

The growth of (112)A-oriented AgInSe 2 on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was ∼10 10 cm 2. Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.

Original languageEnglish (US)
Article number04D115
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume30
Issue number4
DOIs
StatePublished - Jul 1 2012

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atomic structure
Screw dislocations
screw dislocations
Surface reconstruction
Scanning tunneling microscopy
Sputtering
Atomic force microscopy
Evaporation
Semiconductor materials
scanning tunneling microscopy
sputtering
spacing
evaporation
atomic force microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Growth mechanism and surface atomic structure of AgInSe 2 . / Pea Martin, Pamela; Rockett, Angus; Lyding, Joseph W.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 30, No. 4, 04D115, 01.07.2012.

Research output: Contribution to journalArticle

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