Growth kinetics and microstructural evolution of Cu-Sn intermetallic compounds on different Cu substrates during thermal aging

Z. Q. Liu, P. J. Shang, D. X. Li, J. K. Shang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The microstructure of the eutectic SnBi/Cu interface was investigated by transmission electron microscopy (TEM). Insitu and ex-situ thermal aging were conducted to study the nucleation and growth of Cu3Sn and Cu 6Sn5 on both polycrystalline and single crystalline Cu substrates. The growth kinetic analysis showed that although the growth of total IMCs (Cu3Sn + Cu6Sn5) was similar on single and polycrystalline Cu substrates, the Cu3Sn grew faster on polycrystalline Cu substrate than that on single crystal Cu substrate, while Cu6Sn5 grew slowly on polycrystalline Cu during thermal aging.

Original languageEnglish (US)
Title of host publication2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages569-571
Number of pages3
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China
Duration: Aug 10 2009Aug 13 2009

Publication series

Name2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Other

Other2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Country/TerritoryChina
CityBeijing
Period8/10/098/13/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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