Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, S. R. Bank

Research output: Contribution to journalArticlepeer-review


We explore the electrical, optical, and structural properties of fast photoconductors of In0.53Ga0.47As containing a number of different rare-earth arsenide nanostructures. The rare-earth species provides a route to tailor the properties of the photoconductive materials. LuAs, GdAs, and LaAs nanostructures were embedded into InGaAs in a superlattice structure and compared to the relatively well-studied ErAs:InGaAs system. LaAs:InGaAs was found to have the highest dark resistivities, while GdAs:InGaAs had the lowest carrier lifetimes and highest carrier mobility at moderate depositions. The quality of the InGaAs overgrowth appears to have the most significant effect on the properties of these candidate fast photoconductors.

Original languageEnglish (US)
Article number081103
JournalApplied Physics Letters
Issue number8
StatePublished - Feb 23 2015
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation'. Together they form a unique fingerprint.

Cite this