Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates

O. Kwon, J. Boeckl, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, S. A. Ringel

Research output: Contribution to journalArticlepeer-review

Abstract

Visible AlGaInP resonant cavity light emitting diodes (RCLEDs) were grown by molecular beam epitaxy and fabricated on low-dislocation density, SiGe/Si metamorphic substrates. A comparison with identical devices grown on GaAs and Ge substrates shows that not only did the RCLED device structure successfully transfer to the SiGe/Si substrate, but also a higher optical output power was obtained. This result is attributed to enhanced lateral current spreading by the low residual dislocation density (∼1 × 10 6 cm -2) network within the virtual Ge substrate and the superior thermal conductivity of the underlying Si wafer. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated in the RCLED on SiGe to optimize device performance. The measured electroluminescent output power was 166 μW at a 665 nm peak wavelength under 500 mA current injection. Extremely narrow electroluminescence linewidths were achieved with a full width half maximum value of 3.63 nm under 50 mA current injection. These results demonstrate great promise for the monolithic integration of visible band optical sources with Si-based electronic circuitry.

Original languageEnglish (US)
Article number034504
JournalJournal of Applied Physics
Volume97
Issue number3
DOIs
StatePublished - Feb 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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