Abstract
AlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not only did the RCLED device structure successfully transfer to the SiGe substrate, but also a higher optical output power was obtained. This is a result of a high thermal conductivity and an enhanced lateral current spreading. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated to the SiGe RCLED to improve the device performance. With these improvements, a 410μm × 410μm device was fabricated with an optical power of 166μW at 665nm peak wavelength under 500mA current injection and an extremely narrow full width half maximum (FWHM) value of 3.63nm for electroluminescent emission under 50mA injection current.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 161-166 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 799 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering