Abstract
This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 663-688 |
| Number of pages | 26 |
| Journal | Journal of Electronic Materials |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 1 1982 |
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Keywords
- Si Doped GaAs by SiCl + ASCl Liquid Solutions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet. / Feng, M.; Eu, V. K.; Zielinski, T.; Whelan, J. M.
In: Journal of Electronic Materials, Vol. 11, No. 4, 01.07.1982, p. 663-688.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet
AU - Feng, M.
AU - Eu, V. K.
AU - Zielinski, T.
AU - Whelan, J. M.
PY - 1982/7/1
Y1 - 1982/7/1
N2 - This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.
AB - This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.
KW - Si Doped GaAs by SiCl + ASCl Liquid Solutions
UR - http://www.scopus.com/inward/record.url?scp=0020153741&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020153741&partnerID=8YFLogxK
U2 - 10.1007/BF02672390
DO - 10.1007/BF02672390
M3 - Article
AN - SCOPUS:0020153741
VL - 11
SP - 663
EP - 688
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 4
ER -