Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

M. Feng, V. K. Eu, T. Zielinski, J. M. Whelan

Research output: Contribution to journalArticle

Abstract

This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.

Original languageEnglish (US)
Pages (from-to)663-688
Number of pages26
JournalJournal of Electronic Materials
Volume11
Issue number4
DOIs
StatePublished - Jul 1 1982

Fingerprint

Vapors
Doping (additives)
vapor phases
Chemical vapor deposition
vapor deposition
Secondary ion mass spectrometry
secondary ion mass spectrometry
Capacitance
field effect transistors
capacitance
Impurities
Thin films
impurities
gallium arsenide
output
Liquids
liquids
thin films
profiles

Keywords

  • Si Doped GaAs by SiCl + ASCl Liquid Solutions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet. / Feng, M.; Eu, V. K.; Zielinski, T.; Whelan, J. M.

In: Journal of Electronic Materials, Vol. 11, No. 4, 01.07.1982, p. 663-688.

Research output: Contribution to journalArticle

Feng, M. ; Eu, V. K. ; Zielinski, T. ; Whelan, J. M. / Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet. In: Journal of Electronic Materials. 1982 ; Vol. 11, No. 4. pp. 663-688.
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