Abstract
This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.
Original language | English (US) |
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Pages (from-to) | 663-688 |
Number of pages | 26 |
Journal | Journal of Electronic Materials |
Volume | 11 |
Issue number | 4 |
DOIs | |
State | Published - Jul 1 1982 |
Externally published | Yes |
Keywords
- Si Doped GaAs by SiCl + ASCl Liquid Solutions
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry