Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

M. Feng, V. K. Eu, T. Zielinski, J. M. Whelan

Research output: Contribution to journalArticle

Abstract

This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O16 to 2×1019 cm-3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl3:SiCl4 doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n+ structures with order of magnitude changes occurring within 500 Å. For the 1×1016 to 8×l018 cm-3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.

Original languageEnglish (US)
Pages (from-to)663-688
Number of pages26
JournalJournal of Electronic Materials
Volume11
Issue number4
DOIs
StatePublished - Jul 1 1982
Externally publishedYes

Keywords

  • Si Doped GaAs by SiCl + ASCl Liquid Solutions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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