Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

D. K. Sengupta; S. L. Jackson; A. P. Curtis; W. Fang; J. I. Malin; T. U. Horton; H. C. Kuo; A. Moy; J. Miller; K. C. Hsieh; K. Y. Cheng; H. Chen; I. Adesida; S. L. Chuang; M. Feng; G. E. Stillman; W. Wu; J. Tucker; Y. C. Chang; L. Li; H. C. Liu

doi:10.1007/s11664-997-0055-2

Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, H. C. Kuo, A. Moy, J. Miller, K. C. Hsieh, K. Y. Cheng, H. Chen, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, W. Wu, J. Tucker, Y. C. Chang, L. LiH. C. Liu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.

Original language	English (US)
Pages (from-to)	1382-1388
Number of pages	7
Journal	Journal of Electronic Materials
Volume	26
Issue number	12
DOIs	https://doi.org/10.1007/s11664-997-0055-2
State	Published - Dec 1997

Keywords

Gas source molecular beam epitaxy (MBE)
InGaAs/InP
Quantum well infrared photodetectors QWIPs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/s11664-997-0055-2

Library availability

Discover UIUC Full Text

Cite this

Sengupta, D. K., Jackson, S. L., Curtis, A. P., Fang, W., Malin, J. I., Horton, T. U., Kuo, H. C., Moy, A., Miller, J., Hsieh, K. C., Cheng, K. Y., Chen, H., Adesida, I., Chuang, S. L., Feng, M., Stillman, G. E., Wu, W., Tucker, J., Chang, Y. C., ... Liu, H. C. (1997). Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. Journal of Electronic Materials, 26(12), 1382-1388. https://doi.org/10.1007/s11664-997-0055-2

Sengupta, DK, Jackson, SL, Curtis, AP, Fang, W, Malin, JI, Horton, TU, Kuo, HC, Moy, A, Miller, J, Hsieh, KC, Cheng, KY, Chen, H, Adesida, I, Chuang, SL, Feng, M, Stillman, GE, Wu, W, Tucker, J, Chang, YC, Li, L & Liu, HC 1997, 'Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells', Journal of Electronic Materials, vol. 26, no. 12, pp. 1382-1388. https://doi.org/10.1007/s11664-997-0055-2

@article{f69eb8ad11ec434da669e3659b7feb93,

title = "Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells",

abstract = "High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10{\AA}) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.",

keywords = "Gas source molecular beam epitaxy (MBE), InGaAs/InP, Quantum well infrared photodetectors QWIPs",

author = "Sengupta, {D. K.} and Jackson, {S. L.} and Curtis, {A. P.} and W. Fang and Malin, {J. I.} and Horton, {T. U.} and Kuo, {H. C.} and A. Moy and J. Miller and Hsieh, {K. C.} and Cheng, {K. Y.} and H. Chen and I. Adesida and Chuang, {S. L.} and M. Feng and Stillman, {G. E.} and W. Wu and J. Tucker and Chang, {Y. C.} and L. Li and Liu, {H. C.}",

note = "Funding Information: This work is supported by the U.S. Air Force Wright Laboratory under contract number F33615-91-C-1805, and by JSEP under contract number N00014-96-1-0129. The authors would like to acknowledge Professors N. Holonyak, M.B. Weisman, and J.J. Coleman of University of Illinois at Urbana-Champaign, C. Colomb, G. Hoffler, and S. Varadarajan of Semiconductor Research Group, University of Illinois at Urbana-Champaign, Drs. S. D. Gunapala and K.M.S.V. Bandara of JPL, Dr. I. Bloom of I.I.T. Technion and M. Dodd and J. Scheihing of WPAFB laboratory for their advice and technical assistance.",

year = "1997",

month = dec,

doi = "10.1007/s11664-997-0055-2",

language = "English (US)",

volume = "26",

pages = "1382--1388",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

AU - Sengupta, D. K.

AU - Jackson, S. L.

AU - Curtis, A. P.

AU - Fang, W.

AU - Malin, J. I.

AU - Horton, T. U.

AU - Kuo, H. C.

AU - Moy, A.

AU - Miller, J.

AU - Hsieh, K. C.

AU - Cheng, K. Y.

AU - Chen, H.

AU - Adesida, I.

AU - Chuang, S. L.

AU - Feng, M.

AU - Stillman, G. E.

AU - Wu, W.

AU - Tucker, J.

AU - Chang, Y. C.

AU - Li, L.

AU - Liu, H. C.

N1 - Funding Information: This work is supported by the U.S. Air Force Wright Laboratory under contract number F33615-91-C-1805, and by JSEP under contract number N00014-96-1-0129. The authors would like to acknowledge Professors N. Holonyak, M.B. Weisman, and J.J. Coleman of University of Illinois at Urbana-Champaign, C. Colomb, G. Hoffler, and S. Varadarajan of Semiconductor Research Group, University of Illinois at Urbana-Champaign, Drs. S. D. Gunapala and K.M.S.V. Bandara of JPL, Dr. I. Bloom of I.I.T. Technion and M. Dodd and J. Scheihing of WPAFB laboratory for their advice and technical assistance.

PY - 1997/12

Y1 - 1997/12

N2 - High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.

AB - High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.

KW - Gas source molecular beam epitaxy (MBE)

KW - InGaAs/InP

KW - Quantum well infrared photodetectors QWIPs

UR - http://www.scopus.com/inward/record.url?scp=0031373889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031373889&partnerID=8YFLogxK

U2 - 10.1007/s11664-997-0055-2

DO - 10.1007/s11664-997-0055-2

M3 - Article

AN - SCOPUS:0031373889

SN - 0361-5235

VL - 26

SP - 1382

EP - 1388

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this