Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers

S. Thomas; C. A. Martino; M. T. Fresina; D. A. Ahmari; D. W. Barlage; W. H. Chang; M. Feng; G. E. Stillman

Growth and characterization of high-speed InP/InGaAs bipolar transistors using N⁺-InP containing layers

S. Thomas, C. A. Martino, M. T. Fresina, D. A. Ahmari, D. W. Barlage, W. H. Chang, M. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Gaseous SiBr₄ has been demonstrated as a highly efficient n-type dopant source for InGaAs and InP while maintaining excellent morphology. Using this source, CBE grown InP/InGaAs heterojunction bipolar transistors were fabricated. The fabricated HBTs demonstrate excellent dc and high frequency performance, with a current gain cutoff frequency of 40 and a maximum oscillation frequency of 107 GHz.

Original language	English (US)
Pages (from-to)	141-144
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1996
Event	Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger Duration: Apr 21 1996 → Apr 25 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{c6f305e882f84dc090dd77e135f93671,

title = "Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers",

abstract = "Gaseous SiBr4 has been demonstrated as a highly efficient n-type dopant source for InGaAs and InP while maintaining excellent morphology. Using this source, CBE grown InP/InGaAs heterojunction bipolar transistors were fabricated. The fabricated HBTs demonstrate excellent dc and high frequency performance, with a current gain cutoff frequency of 40 and a maximum oscillation frequency of 107 GHz.",

author = "S. Thomas and Martino, {C. A.} and Fresina, {M. T.} and Ahmari, {D. A.} and Barlage, {D. W.} and Chang, {W. H.} and M. Feng and Stillman, {G. E.}",

year = "1996",

language = "English (US)",

pages = "141--144",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials ; Conference date: 21-04-1996 Through 25-04-1996",

}

TY - JOUR

T1 - Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers

AU - Thomas, S.

AU - Martino, C. A.

AU - Fresina, M. T.

AU - Ahmari, D. A.

AU - Barlage, D. W.

AU - Chang, W. H.

AU - Feng, M.

AU - Stillman, G. E.

PY - 1996

Y1 - 1996

N2 - Gaseous SiBr4 has been demonstrated as a highly efficient n-type dopant source for InGaAs and InP while maintaining excellent morphology. Using this source, CBE grown InP/InGaAs heterojunction bipolar transistors were fabricated. The fabricated HBTs demonstrate excellent dc and high frequency performance, with a current gain cutoff frequency of 40 and a maximum oscillation frequency of 107 GHz.

AB - Gaseous SiBr4 has been demonstrated as a highly efficient n-type dopant source for InGaAs and InP while maintaining excellent morphology. Using this source, CBE grown InP/InGaAs heterojunction bipolar transistors were fabricated. The fabricated HBTs demonstrate excellent dc and high frequency performance, with a current gain cutoff frequency of 40 and a maximum oscillation frequency of 107 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0029712150&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029712150&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029712150

SN - 1092-8669

SP - 141

EP - 144

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials

Y2 - 21 April 1996 through 25 April 1996

ER -

Growth and characterization of high-speed InP/InGaAs bipolar transistors using N⁺-InP containing layers

Abstract

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