Growth and characterization of high-speed InP/InGaAs bipolar transistors using N+-InP containing layers

S. Thomas, C. A. Martino, M. T. Fresina, D. A. Ahmari, D. W. Barlage, W. H. Chang, M. Feng, G. E. Stillman

Research output: Contribution to journalConference articlepeer-review

Abstract

Gaseous SiBr4 has been demonstrated as a highly efficient n-type dopant source for InGaAs and InP while maintaining excellent morphology. Using this source, CBE grown InP/InGaAs heterojunction bipolar transistors were fabricated. The fabricated HBTs demonstrate excellent dc and high frequency performance, with a current gain cutoff frequency of 40 and a maximum oscillation frequency of 107 GHz.

Original languageEnglish (US)
Pages (from-to)141-144
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1996
EventProceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger
Duration: Apr 21 1996Apr 25 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Growth and characterization of high-speed InP/InGaAs bipolar transistors using N<sup>+</sup>-InP containing layers'. Together they form a unique fingerprint.

Cite this