Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe

S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer, N. Samarth

Research output: Contribution to journalConference articlepeer-review


A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.

Original languageEnglish (US)
Pages (from-to)1266-1269
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - May 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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