Green's function simulation of terahertz photoconductivity in double quantum well field effect transistors

D. Guan, U. Ravaioli, X. G. Peralta, S. J. Allen, M. Wanke

Research output: Contribution to journalArticlepeer-review

Abstract

We present simulations of terahertz photo-response experiments on a double quantum well FET structure, with a periodic metallic grating. When radiation is shed on the device at a certain frequency, measurements show that photo-response peaks appear as the gate voltage is varied, over a range of frequencies and temperatures. To explain the basic physical phenomena at the basis of this experiment, we have developed a non-equilibrium Green's function model for the electron transport problem inside the device structure. Following a semi-empirical approach, we have developed a formulation to express the drag rate inclusive of radiation power absorption and Coulomb drag effects, starting from an existing approach for coupled wells in the absence of radiation. A single calibration factor is evaluated for one experimental condition and left unchanged for all other situations examined. The simulation results follow closely the measured data in the range of frequencies and temperatures covered by the experiments.

Original languageEnglish (US)
Pages (from-to)S446-S448
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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