TY - JOUR
T1 - Green function treatment of electronic transport in narrow rough semiconductor conduction channels
AU - Martin, Pierre N.
AU - Ravaioli, Umberto
PY - 2009
Y1 - 2009
N2 - We explore the effect of geometrical fluctuations on the electronic transport in rough Si nanowire (NW) thermoelectric devices of diameter D < 10 nm. At this scale, the quantum nature of transport is accounted in the computation of energy dependent transmission coefficients through a recursive green function algorithm. The rough 3D NW geometry is used as a direct input to simulations through the roughness height Δ and autocovariance length L. Using a non parabolic band structure, the channel conductance above 0.1 eV is drastically reduced in such NW with high D/Δ ratio. In addition, the roughness induced resistivity is only increased by 6% on the first energy level of 10 nm Si channels with Δ = 7.7 Å, showing possible application for high thermoelectric figures of merit ZT.
AB - We explore the effect of geometrical fluctuations on the electronic transport in rough Si nanowire (NW) thermoelectric devices of diameter D < 10 nm. At this scale, the quantum nature of transport is accounted in the computation of energy dependent transmission coefficients through a recursive green function algorithm. The rough 3D NW geometry is used as a direct input to simulations through the roughness height Δ and autocovariance length L. Using a non parabolic band structure, the channel conductance above 0.1 eV is drastically reduced in such NW with high D/Δ ratio. In addition, the roughness induced resistivity is only increased by 6% on the first energy level of 10 nm Si channels with Δ = 7.7 Å, showing possible application for high thermoelectric figures of merit ZT.
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U2 - 10.1088/1742-6596/193/1/012009
DO - 10.1088/1742-6596/193/1/012009
M3 - Article
AN - SCOPUS:74049146995
VL - 193
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012009
ER -