TY - JOUR
T1 - Green-emitting cubic GaN/In0.16Ga0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature
AU - Lee, J.
AU - Bayram, C.
N1 - The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under OPEN Program, Award No. DE-AR0001558, and in part by the Office of Naval Research (ONR), under Award No. N00014-23-1-2423. The views and opinions of the authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. Temperature-dependent cathodoluminescence was conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. The authors respectfully acknowledge the valuable support from Dr. Benjamin Lawrie at CNMS. The authors also acknowledge the valuable characterization support from the EUROFINS EAG MATERIALS SCIENCE, LLC. This work was carried out in the Micro and Nanotechnology Laboratory and Frederick Seitz Materials Research Laboratory Central Research Facilities, University of Illinois Urbana-Champaign, IL, USA, and the authors acknowledge the valuable support from Dr. Honghui Zhou and Dr. Jade Wang.
The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under OPEN Program, Award No. DE-AR0001558, and in part by the Office of Naval Research (ONR), under Award No. N00014-23-1-2423. The views and opinions of the authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. Temperature-dependent cathodoluminescence was conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. The authors respectfully acknowledge the valuable support from Dr. Benjamin Lawrie at CNMS. The authors also acknowledge the valuable characterization support from the EUROFINS EAG MATERIALS SCIENCE, LLC. This work was carried out in the Micro and Nanotechnology Laboratory and Frederick Seitz Materials Research Laboratory Central Research Facilities, University of Illinois Urbana-Champaign, IL, USA, and the authors acknowledge the valuable support from Dr. Honghui Zhou and Dr. Jade Wang.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Structural and optical properties of a green-emitting cubic (i.e., zinc blende) GaN/In0.16Ga0.84N/GaN single quantum well structure are reported. The active layer is grown on a phase-pure (i.e., 100%) cubic GaN enabled on a 1 × 1 cm2 U-grooved silicon (100) through aspect ratio phase trapping. Energy dispersive x-ray spectroscopy combined with room temperature cathodoluminescence reveals 522 nm green light emission at room temperature with only 16.0% ± 1.6% of indium content, which is ∼30% less than the amount of indium needed in a traditional green-emitting hexagonal (i.e., wurtzite) well. Temperature-dependent behavior of the green emission, such as activation energy, s-shaped peak energy shift, and linewidth, is reported. Cathodoluminescence at 8 and 300 K reveals an internal quantum efficiency of 32.0% ± 0.6%, which is higher than any reported value for cubic wells. Overall, phase-pure cubic active layers on phase transition cubic GaN are shown to be promising for green and longer wavelength emitters.
AB - Structural and optical properties of a green-emitting cubic (i.e., zinc blende) GaN/In0.16Ga0.84N/GaN single quantum well structure are reported. The active layer is grown on a phase-pure (i.e., 100%) cubic GaN enabled on a 1 × 1 cm2 U-grooved silicon (100) through aspect ratio phase trapping. Energy dispersive x-ray spectroscopy combined with room temperature cathodoluminescence reveals 522 nm green light emission at room temperature with only 16.0% ± 1.6% of indium content, which is ∼30% less than the amount of indium needed in a traditional green-emitting hexagonal (i.e., wurtzite) well. Temperature-dependent behavior of the green emission, such as activation energy, s-shaped peak energy shift, and linewidth, is reported. Cathodoluminescence at 8 and 300 K reveals an internal quantum efficiency of 32.0% ± 0.6%, which is higher than any reported value for cubic wells. Overall, phase-pure cubic active layers on phase transition cubic GaN are shown to be promising for green and longer wavelength emitters.
UR - https://www.scopus.com/pages/publications/85181533003
UR - https://www.scopus.com/pages/publications/85181533003#tab=citedBy
U2 - 10.1063/5.0179477
DO - 10.1063/5.0179477
M3 - Article
AN - SCOPUS:85181533003
SN - 0003-6951
VL - 124
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 1
M1 - 011101
ER -