Graphitized carbon on GaAs(100) substrates

J. Simon, P. J. Simmonds, J. M. Woodall, M. L. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the formation of graphitized carbon on GaAs(100) surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for s p 2 -bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5-3 nm in size and demonstrate that crystallite domain size can be increased through the use of higher etch temperatures.

Original languageEnglish (US)
Article number073113
JournalApplied Physics Letters
Volume98
Issue number7
DOIs
StatePublished - Feb 14 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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