We report on the formation of graphitized carbon on GaAs(100) surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for s p 2 -bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5-3 nm in size and demonstrate that crystallite domain size can be increased through the use of higher etch temperatures.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)