Graphene-side-gate engineering

Ching Tzu Chen; Tony Low; Hsin Ying Chiu; Wenjuan Zhu

doi:10.1109/LED.2011.2180355

Graphene-side-gate engineering

Ching Tzu Chen, Tony Low, Hsin Ying Chiu, Wenjuan Zhu

Research output: Contribution to journal › Article › peer-review

Abstract

Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

Original language	English (US)
Article number	6144689
Pages (from-to)	330-332
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1109/LED.2011.2180355
State	Published - Mar 2012
Externally published	Yes

Keywords

Electrostatics
graphene field-effect transistor (FET)
side gate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2011.2180355

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AB - Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

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Graphene-side-gate engineering

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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