TY - GEN
T1 - Graphene nano-ribbon field-effect transistors as future low-power devices
AU - Chen, Ying Yu
AU - Sangai, Amit
AU - Gholipour, Morteza
AU - Chen, Deming
PY - 2013
Y1 - 2013
N2 - The graphene nano-ribbon field effect transistor (GNRFET) is an emerging technology that received much attention in recent years. Recent work on GNRFET circuit simulations has shown that GNRFETs may have potential in low power applications. In this paper, we review the existing work on GNRFET circuit modeling, compare the two varieties of GNRFETs, Metal-Oxide-Semiconducting-(MOS- )type and Schottky-Barrier-(SB-)type GNRFETs, and thoroughly discuss and explore their respective strengths in terms of delay, power, and noise margin. From this point of view, we discuss their possible applications, especially the use towards low-power computing. Our simulations show that ideal (nonideal) MOS-GNRFET consumes 18% (35%) and 54% (102%) total power as compared to high-performance (HP) Si-CMOS and low-power (LP) Si-CMOS, respectively. SB-GNRFET does not compare favorably to MOS-GNRFET in terms of power consumption. However, ideal (non-ideal) SB-GNRFET has 3% (5.4X) and 0.45% (83.5%) energy-delay product (EDP) compared to Si-CMOS (HP) and Si-CMOS (LP), respectively, while ideal (non-ideal) MOS-GNRFET has 8% (93%) and 1.25% (14.3%) EDP compared to Si-CMOS (HP) and Si-CMOS (LP), respectively.
AB - The graphene nano-ribbon field effect transistor (GNRFET) is an emerging technology that received much attention in recent years. Recent work on GNRFET circuit simulations has shown that GNRFETs may have potential in low power applications. In this paper, we review the existing work on GNRFET circuit modeling, compare the two varieties of GNRFETs, Metal-Oxide-Semiconducting-(MOS- )type and Schottky-Barrier-(SB-)type GNRFETs, and thoroughly discuss and explore their respective strengths in terms of delay, power, and noise margin. From this point of view, we discuss their possible applications, especially the use towards low-power computing. Our simulations show that ideal (nonideal) MOS-GNRFET consumes 18% (35%) and 54% (102%) total power as compared to high-performance (HP) Si-CMOS and low-power (LP) Si-CMOS, respectively. SB-GNRFET does not compare favorably to MOS-GNRFET in terms of power consumption. However, ideal (non-ideal) SB-GNRFET has 3% (5.4X) and 0.45% (83.5%) energy-delay product (EDP) compared to Si-CMOS (HP) and Si-CMOS (LP), respectively, while ideal (non-ideal) MOS-GNRFET has 8% (93%) and 1.25% (14.3%) EDP compared to Si-CMOS (HP) and Si-CMOS (LP), respectively.
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U2 - 10.1109/ISLPED.2013.6629286
DO - 10.1109/ISLPED.2013.6629286
M3 - Conference contribution
AN - SCOPUS:84889591630
SN - 9781479912353
T3 - Proceedings of the International Symposium on Low Power Electronics and Design
SP - 151
EP - 156
BT - Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2013
T2 - 2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013
Y2 - 4 September 2013 through 6 September 2013
ER -