Graphene metallization of high-stress silicon nitride resonators for electrical integration

Sunwoo Lee, Vivekananda P. Adiga, Robert A. Barton, Arend M. Van Der Zande, Gwan Hyoung Lee, B. Rob Ilic, Alexander Gondarenko, Jeevak M. Parpia, Harold G. Craighead, James Hone

Research output: Contribution to journalArticle

Abstract

High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N 4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

Original languageEnglish (US)
Pages (from-to)4275-4279
Number of pages5
JournalNano letters
Volume13
Issue number9
DOIs
StatePublished - Sep 11 2013
Externally publishedYes

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Metallizing
Silicon nitride
silicon nitrides
Graphene
Resonators
graphene
resonators
Q factors
Chromium
Aluminum
Nitrides
nitrides
Heterojunctions
readout
signal processing
Electrostatics
chromium
Signal processing
Electric properties

Keywords

  • NEMS
  • Silicon nitride resonators
  • graphene
  • optomechanics
  • quality factor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Lee, S., Adiga, V. P., Barton, R. A., Van Der Zande, A. M., Lee, G. H., Ilic, B. R., ... Hone, J. (2013). Graphene metallization of high-stress silicon nitride resonators for electrical integration. Nano letters, 13(9), 4275-4279. https://doi.org/10.1021/nl4020414

Graphene metallization of high-stress silicon nitride resonators for electrical integration. / Lee, Sunwoo; Adiga, Vivekananda P.; Barton, Robert A.; Van Der Zande, Arend M.; Lee, Gwan Hyoung; Ilic, B. Rob; Gondarenko, Alexander; Parpia, Jeevak M.; Craighead, Harold G.; Hone, James.

In: Nano letters, Vol. 13, No. 9, 11.09.2013, p. 4275-4279.

Research output: Contribution to journalArticle

Lee, S, Adiga, VP, Barton, RA, Van Der Zande, AM, Lee, GH, Ilic, BR, Gondarenko, A, Parpia, JM, Craighead, HG & Hone, J 2013, 'Graphene metallization of high-stress silicon nitride resonators for electrical integration', Nano letters, vol. 13, no. 9, pp. 4275-4279. https://doi.org/10.1021/nl4020414
Lee, Sunwoo ; Adiga, Vivekananda P. ; Barton, Robert A. ; Van Der Zande, Arend M. ; Lee, Gwan Hyoung ; Ilic, B. Rob ; Gondarenko, Alexander ; Parpia, Jeevak M. ; Craighead, Harold G. ; Hone, James. / Graphene metallization of high-stress silicon nitride resonators for electrical integration. In: Nano letters. 2013 ; Vol. 13, No. 9. pp. 4275-4279.
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