Graphene growth on h-BN by molecular beam epitaxy

Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy, Loren N. Pfeiffer, Aron Pinczuk, Annette S. Plaut, Lei Wang, Cory R. Dean, Roberto Buizza, Arend M. Van Der Zande, James Hone, Kenji Watanabe, Takashi Taniguchi

Research output: Contribution to journalArticle

Abstract

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

Original languageEnglish (US)
Pages (from-to)975-978
Number of pages4
JournalSolid State Communications
Volume152
Issue number12
DOIs
StatePublished - Jun 1 2012
Externally publishedYes

Keywords

  • A. Graphene
  • B. Molecular beam epitaxy
  • C. AFM
  • C. Raman spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Garcia, J. M., Wurstbauer, U., Levy, A., Pfeiffer, L. N., Pinczuk, A., Plaut, A. S., Wang, L., Dean, C. R., Buizza, R., Van Der Zande, A. M., Hone, J., Watanabe, K., & Taniguchi, T. (2012). Graphene growth on h-BN by molecular beam epitaxy. Solid State Communications, 152(12), 975-978. https://doi.org/10.1016/j.ssc.2012.04.005