Graphene growth on h-BN by molecular beam epitaxy

Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy, Loren N. Pfeiffer, Aron Pinczuk, Annette S. Plaut, Lei Wang, Cory R. Dean, Roberto Buizza, Arend M. Van Der Zande, James Hone, Kenji Watanabe, Takashi Taniguchi

Research output: Contribution to journalArticle

Abstract

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

Original languageEnglish (US)
Pages (from-to)975-978
Number of pages4
JournalSolid State Communications
Volume152
Issue number12
DOIs
StatePublished - Jun 1 2012
Externally publishedYes

Fingerprint

Graphite
Boron nitride
boron nitrides
Molecular beam epitaxy
Graphene
graphene
molecular beam epitaxy
Carbon
carbon
Atoms
flakes
Substrates
Epitaxial growth
epitaxy
Surface morphology
atoms
Raman scattering
Microscopes
microscopes
Raman spectra

Keywords

  • A. Graphene
  • B. Molecular beam epitaxy
  • C. AFM
  • C. Raman spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Garcia, J. M., Wurstbauer, U., Levy, A., Pfeiffer, L. N., Pinczuk, A., Plaut, A. S., ... Taniguchi, T. (2012). Graphene growth on h-BN by molecular beam epitaxy. Solid State Communications, 152(12), 975-978. https://doi.org/10.1016/j.ssc.2012.04.005

Graphene growth on h-BN by molecular beam epitaxy. / Garcia, Jorge M.; Wurstbauer, Ulrich; Levy, Antonio; Pfeiffer, Loren N.; Pinczuk, Aron; Plaut, Annette S.; Wang, Lei; Dean, Cory R.; Buizza, Roberto; Van Der Zande, Arend M.; Hone, James; Watanabe, Kenji; Taniguchi, Takashi.

In: Solid State Communications, Vol. 152, No. 12, 01.06.2012, p. 975-978.

Research output: Contribution to journalArticle

Garcia, JM, Wurstbauer, U, Levy, A, Pfeiffer, LN, Pinczuk, A, Plaut, AS, Wang, L, Dean, CR, Buizza, R, Van Der Zande, AM, Hone, J, Watanabe, K & Taniguchi, T 2012, 'Graphene growth on h-BN by molecular beam epitaxy', Solid State Communications, vol. 152, no. 12, pp. 975-978. https://doi.org/10.1016/j.ssc.2012.04.005
Garcia JM, Wurstbauer U, Levy A, Pfeiffer LN, Pinczuk A, Plaut AS et al. Graphene growth on h-BN by molecular beam epitaxy. Solid State Communications. 2012 Jun 1;152(12):975-978. https://doi.org/10.1016/j.ssc.2012.04.005
Garcia, Jorge M. ; Wurstbauer, Ulrich ; Levy, Antonio ; Pfeiffer, Loren N. ; Pinczuk, Aron ; Plaut, Annette S. ; Wang, Lei ; Dean, Cory R. ; Buizza, Roberto ; Van Der Zande, Arend M. ; Hone, James ; Watanabe, Kenji ; Taniguchi, Takashi. / Graphene growth on h-BN by molecular beam epitaxy. In: Solid State Communications. 2012 ; Vol. 152, No. 12. pp. 975-978.
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