Graphene growth on h-BN by molecular beam epitaxy

Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy, Loren N. Pfeiffer, Aron Pinczuk, Annette S. Plaut, Lei Wang, Cory R. Dean, Roberto Buizza, Arend M. Van Der Zande, James Hone, Kenji Watanabe, Takashi Taniguchi

Research output: Contribution to journalArticlepeer-review


The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

Original languageEnglish (US)
Pages (from-to)975-978
Number of pages4
JournalSolid State Communications
Issue number12
StatePublished - Jun 2012
Externally publishedYes


  • A. Graphene
  • B. Molecular beam epitaxy
  • C. AFM
  • C. Raman spectroscopy

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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