TY - GEN
T1 - Graphene-based plasma wave interconnects for on-chip communication in the terahertz band
AU - Rakheja, Shaloo
AU - Li, Kexin
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/1/3
Y1 - 2018/1/3
N2 - As the communication complexity is exacerbated by dimensional scaling of on-chip components, it becomes important to investigate communication and transduction mechanisms that can deliver enhanced connectivity, while minimizing energy dissipated in communication. The communication bottleneck can be mitigated by using graphene-based plasmonic interconnects in high-performance systems. In this work, we use the phenomenon of Dyakonov-Shur (DS) instability in a quasi-ballistic GaN high-electron mobility transistor (HEMT) to electrically excite surface plasmon polaritons (SPPs) in graphene serving as the gate electrode of the HEMT. Information encoded in SPPs is guided along the graphene waveguide for low-energy on-chip data communication. We evaluate and compare the performance of plasmonic interconnects against electrical interconnects at scaled technology nodes.
AB - As the communication complexity is exacerbated by dimensional scaling of on-chip components, it becomes important to investigate communication and transduction mechanisms that can deliver enhanced connectivity, while minimizing energy dissipated in communication. The communication bottleneck can be mitigated by using graphene-based plasmonic interconnects in high-performance systems. In this work, we use the phenomenon of Dyakonov-Shur (DS) instability in a quasi-ballistic GaN high-electron mobility transistor (HEMT) to electrically excite surface plasmon polaritons (SPPs) in graphene serving as the gate electrode of the HEMT. Information encoded in SPPs is guided along the graphene waveguide for low-energy on-chip data communication. We evaluate and compare the performance of plasmonic interconnects against electrical interconnects at scaled technology nodes.
UR - http://www.scopus.com/inward/record.url?scp=85045965213&partnerID=8YFLogxK
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U2 - 10.1109/E3S.2017.8246185
DO - 10.1109/E3S.2017.8246185
M3 - Conference contribution
AN - SCOPUS:85045965213
T3 - 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
SP - 1
EP - 3
BT - 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017
Y2 - 19 October 2017 through 20 October 2017
ER -