Graded Heterojunction Ion-Implanted Fet'S: A Combination Of Heteroepitaxy And Ion Implantation

G. W. Wang; M. Feng; Y. P. Liaw; R. Kaliski; T. Hwang; C. L. Lau; C. Ito

doi:10.1109/16.47795

Graded Heterojunction Ion-Implanted Fet'S: A Combination Of Heteroepitaxy And Ion Implantation

G. W. Wang
, M. Feng
, Y. P. Liaw
, R. Kaliski
, T. Hwang
, C. L. Lau
, C. Ito

Research output: Contribution to journal › Article › peer-review

Abstract

A new type of FET is fabricated by ion implantation into inverted GaAs/AlGaAs heterostructures grown by MOCVD. The AlAs.

Original language	English (US)
Pages (from-to)	816-818
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	3
DOIs	https://doi.org/10.1109/16.47795
State	Published - Mar 1990
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.47795

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title = "Graded Heterojunction Ion-Implanted Fet'S: A Combination Of Heteroepitaxy And Ion Implantation",

abstract = "A new type of FET is fabricated by ion implantation into inverted GaAs/AlGaAs heterostructures grown by MOCVD. The AlAs.",

author = "Wang, \{G. W.\} and M. Feng and Liaw, \{Y. P.\} and R. Kaliski and T. Hwang and Lau, \{C. L.\} and C. Ito",

year = "1990",

month = mar,

doi = "10.1109/16.47795",

language = "English (US)",

volume = "37",

pages = "816--818",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Graded Heterojunction Ion-Implanted Fet'S

T2 - A Combination Of Heteroepitaxy And Ion Implantation

AU - Wang, G. W.

AU - Feng, M.

AU - Liaw, Y. P.

AU - Kaliski, R.

AU - Hwang, T.

AU - Lau, C. L.

AU - Ito, C.

PY - 1990/3

Y1 - 1990/3

N2 - A new type of FET is fabricated by ion implantation into inverted GaAs/AlGaAs heterostructures grown by MOCVD. The AlAs.

AB - A new type of FET is fabricated by ion implantation into inverted GaAs/AlGaAs heterostructures grown by MOCVD. The AlAs.

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UR - https://www.scopus.com/pages/publications/0025402411#tab=citedBy

U2 - 10.1109/16.47795

DO - 10.1109/16.47795

M3 - Article

AN - SCOPUS:0025402411

SN - 0018-9383

VL - 37

SP - 816

EP - 818

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Graded Heterojunction Ion-Implanted Fet'S: A Combination Of Heteroepitaxy And Ion Implantation

Abstract

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