Graded Heterojunction Ion-Implanted Fet'S: A Combination Of Heteroepitaxy And Ion Implantation

G. W. Wang, M. Feng, Y. P. Liaw, R. Kaliski, T. Hwang, C. L. Lau, C. 1To

Research output: Contribution to journalArticlepeer-review

Abstract

A new type of FET is fabricated by ion implantation into inverted GaAs/AlGaAs heterostructures grown by MOCVD. The AlAs.

Original languageEnglish (US)
Pages (from-to)816-818
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume37
Issue number3
DOIs
StatePublished - Mar 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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