Graded-emitter AlGaN/GaN heterojunction bipolar transistors

J. J. Huang; M. Hattendorf; M. Feng; D. J.H. Lambert; B. S. Shelton; M. M. Wong; U. Chowdhury; T. G. Zhu; H. K. Kwon; R. D. Dupuis

doi:10.1049/el:20000887

Graded-emitter AlGaN/GaN heterojunction bipolar transistors

J. J. Huang, M. Hattendorf, M. Feng, D. J.H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, R. D. Dupuis

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm² exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4-10 and a common-emitter offset voltage V_CEoff = 4 V at room temperature.

Original language	English (US)
Pages (from-to)	1239-1240
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	14
DOIs	https://doi.org/10.1049/el:20000887
State	Published - Jul 6 2000

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Electrical and Electronic Engineering

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10.1049/el:20000887

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title = "Graded-emitter AlGaN/GaN heterojunction bipolar transistors",

abstract = "AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4-10 and a common-emitter offset voltage VCEoff = 4 V at room temperature.",

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month = jul,

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doi = "10.1049/el:20000887",

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volume = "36",

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TY - JOUR

T1 - Graded-emitter AlGaN/GaN heterojunction bipolar transistors

AU - Huang, J. J.

AU - Hattendorf, M.

AU - Feng, M.

AU - Lambert, D. J.H.

AU - Shelton, B. S.

AU - Wong, M. M.

AU - Chowdhury, U.

AU - Zhu, T. G.

AU - Kwon, H. K.

AU - Dupuis, R. D.

PY - 2000/7/6

Y1 - 2000/7/6

N2 - AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4-10 and a common-emitter offset voltage VCEoff = 4 V at room temperature.

AB - AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4-10 and a common-emitter offset voltage VCEoff = 4 V at room temperature.

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DO - 10.1049/el:20000887

M3 - Article

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EP - 1240

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Graded-emitter AlGaN/GaN heterojunction bipolar transistors

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