Graded-emitter AlGaN/GaN heterojunction bipolar transistors

J. J. Huang, M. Hattendorf, Milton Feng, D. J.H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, R. D. Dupuis

Research output: Contribution to journalArticlepeer-review


AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60×60 μm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4-10 and a common-emitter offset voltage VCEoff = 4 V at room temperature.

Original languageEnglish (US)
Pages (from-to)1239-1240
Number of pages2
JournalElectronics Letters
Issue number14
StatePublished - Jul 6 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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