Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors

B. F. Chu-Kung, M. Feng, G. Walter, N. Holonyak, T. Chung, J. H. Ryou, J. Limb, D. Yoo, S. C. Shen, R. D. Dupuis, D. Keogh, P. M. Asbeck

Research output: Contribution to journalArticlepeer-review

Abstract

The authors report radiative recombination from a graded-base InGaN/GaN heterojunction bipolar transistor (HBT) grown by metal-organic chemical vapor deposition on sapphire. For a device with a 40 × 40 μm 2 emitter area, a differential dc current gain of 15 is measured from the common-emitter current-voltage characteristics, with the HBT breakdown voltage BV CEO>65 V. The heterojunction bipolar light-emitting transistor exhibits a base-region recombination radiation peak in the visible spectral range with a dominant peak at λ=385 nm (blue emission).

Original languageEnglish (US)
Article number082108
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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