Glancing incidence diffuse X-ray scattering studies of implantation damage in Si

K. Nordlund, P. Partyka, Y. Zhong, I. K. Robinson, R. S. Averback, P. Ehrhart

Research output: Contribution to journalArticlepeer-review

Abstract

Diffuse X-ray scattering (DXS) at glancing incidence is a potentially powerful means for elucidating damage structures in irradiated solids. Fundamental to the analysis of diffuse X-ray scattering data is a knowledge of the atomic displacement field around defects, which for implantation damage in crystals like Si has been difficult to obtain using analytical solutions of elastic continuum theory. We present a method for predicting the diffuse scattering pattern by calculating the displacement field around a defect using fully atomistic simulations and performing discrete sums for the scattering intensity. We apply the method to analyze experimental DXS results of defects produced by 4.5 keV He and 20 keV Ga irradiations of Si at temperatures of 100-300 K. The results show that the self-interstitial in ion-irradiated Si becomes mobile around 150 K, and that amorphization of silicon by light and medium-heavy projectiles occurs homogeneously through the buildup of interstitial clusters, and not within single cascade events.

Original languageEnglish (US)
Pages (from-to)399-409
Number of pages11
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume147
Issue number1-4
DOIs
StatePublished - Jan 1 1999

Keywords

  • Amorphization
  • Defect
  • Defect clusters
  • Diffuse X-ray scattering
  • Silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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