TY - JOUR
T1 - Gigahertz Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium-Niobate-on-Sapphire
AU - Lu, Ruochen
AU - Yang, Yansong
AU - Hassanien, Ahmed E.
AU - Gong, Songbin
N1 - Manuscript received February 2, 2021; revised March 24, 2021; accepted March 29, 2021. Date of publication May 4, 2021; date of current version July 1, 2021. This work was supported by the NSF SpecEES Programs. (Corresponding author: Ruochen Lu.) Ruochen Lu was with the Department of Electrical and Computing Engineering, University of Illinois at Urbana–Champaign, Urbana, IL 61801 USA. He is now with the Department of Electrical and Computing Engineering, The University of Texas at Austin, Austin, TX 78712 USA (e-mail: [email protected]).
PY - 2021/7
Y1 - 2021/7
N2 - In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO3)-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is-45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/μ s. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO3-on-sapphire for RF and cross domain applications at gigahertz.
AB - In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO3)-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is-45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/μ s. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO3-on-sapphire for RF and cross domain applications at gigahertz.
KW - Acoustic devices
KW - delay lines
KW - lithium niobate
KW - microelectromechanical systems
KW - piezoelectric devices
KW - shear horizontal surface acoustic wave (SH-SAW)
KW - transversal filters
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U2 - 10.1109/TMTT.2021.3074918
DO - 10.1109/TMTT.2021.3074918
M3 - Article
AN - SCOPUS:85105605909
SN - 0018-9480
VL - 69
SP - 3246
EP - 3254
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 7
M1 - 9422920
ER -