Abstract
In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO3)-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is-45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/μ s. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO3-on-sapphire for RF and cross domain applications at gigahertz.
Original language | English (US) |
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Article number | 9422920 |
Pages (from-to) | 3246-3254 |
Number of pages | 9 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 69 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2021 |
Keywords
- Acoustic devices
- delay lines
- lithium niobate
- microelectromechanical systems
- piezoelectric devices
- shear horizontal surface acoustic wave (SH-SAW)
- transversal filters
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering