Giant isotope effect in hot electron degradation of metal oxide silicon devices

Karl Hess; Isik C. Kizilyalli; Joseph W. Lyding

doi:10.1109/16.658674

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Karl Hess, Isik C. Kizilyalli, Joseph W. Lyding

Research output: Contribution to journal › Article › peer-review

Abstract

A giant isotope effect of hot electron degradation was found by annealing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation. We also present a first account of the physical theory of this effect with a view on engineering application and point toward rules of current and voltage scaling as obtained from this theory.

Original language	English (US)
Pages (from-to)	406-416
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	2
DOIs	https://doi.org/10.1109/16.658674
State	Published - 1998
Externally published	Yes

Keywords

Charge carrier processes
Cmos integrated circuits
Deuterium materials/devices
Hydrogen materials/devices
Mos devices
Semiconductor-insulator interfaces
Transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/16.658674

Library availability

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title = "Giant isotope effect in hot electron degradation of metal oxide silicon devices",

abstract = "A giant isotope effect of hot electron degradation was found by annealing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation. We also present a first account of the physical theory of this effect with a view on engineering application and point toward rules of current and voltage scaling as obtained from this theory.",

keywords = "Charge carrier processes, Cmos integrated circuits, Deuterium materials/devices, Hydrogen materials/devices, Mos devices, Semiconductor-insulator interfaces, Transistors",

author = "Karl Hess and Kizilyalli, {Isik C.} and Lyding, {Joseph W.}",

note = "Funding Information: Manuscript received July 8, 1997; revised September 23, 1997. The review of this paper was arranged by Editor K. Shenai. This work was supported by the Office of Naval Research and the Beckman Institute for Advanced Science and Technology. K. Hess and J. W. Lyding are with the Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 USA. I. C. Kizilyalli is with Lucent Bell Laboratories, Orlando, FL 32819 USA. Publisher Item Identifier S 0018-9383(98)00942-3.",

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doi = "10.1109/16.658674",

language = "English (US)",

volume = "45",

pages = "406--416",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Giant isotope effect in hot electron degradation of metal oxide silicon devices

AU - Hess, Karl

AU - Kizilyalli, Isik C.

AU - Lyding, Joseph W.

N1 - Funding Information: Manuscript received July 8, 1997; revised September 23, 1997. The review of this paper was arranged by Editor K. Shenai. This work was supported by the Office of Naval Research and the Beckman Institute for Advanced Science and Technology. K. Hess and J. W. Lyding are with the Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 USA. I. C. Kizilyalli is with Lucent Bell Laboratories, Orlando, FL 32819 USA. Publisher Item Identifier S 0018-9383(98)00942-3.

PY - 1998

Y1 - 1998

N2 - A giant isotope effect of hot electron degradation was found by annealing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation. We also present a first account of the physical theory of this effect with a view on engineering application and point toward rules of current and voltage scaling as obtained from this theory.

AB - A giant isotope effect of hot electron degradation was found by annealing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation. We also present a first account of the physical theory of this effect with a view on engineering application and point toward rules of current and voltage scaling as obtained from this theory.

KW - Charge carrier processes

KW - Cmos integrated circuits

KW - Deuterium materials/devices

KW - Hydrogen materials/devices

KW - Mos devices

KW - Semiconductor-insulator interfaces

KW - Transistors

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DO - 10.1109/16.658674

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Giant isotope effect in hot electron degradation of metal oxide silicon devices

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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