@inproceedings{7ec6e11858f045a7b35ac68827191b9a,
title = "Germanium solar cells grown by molecular beam epitaxy for lattice-matched, four-junction solar cells",
abstract = "We demonstrate Ge junctions grown by molecular beam epitaxy (MBE) for lattice-matched, four-junction solar cells. Integrating a Ge bottom cell beneath a 1.9 eV InGaP/1.4 eV Ga(In)As/1.0 eV dilute nitride stack could enable ultra-high efficiencies in a single growth step. In this work, we successfully created Ge junctions by growth of homoepitaxial n-Ge emitters using As2 as a dopant on p-Ge wafers within a III-V MBE system. The growth and post anneal conditions are shown to strongly influence open-circuit voltage (Voc) in epitaxial Ge solar cells. Voc = 0.174 V was obtained without a window layer, which is comparable to the Voc of diffused Ge cells fabricated by metal-organic-vapor-phase-epitaxy for triple-junction solar cells.",
keywords = "Germanium solar cell, MBE, four-junction, lattice-matched, photovoltaic cells",
author = "Taizo Masuda and Joseph Faucher and Lee, {Minjoo Larry}",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356341",
language = "English (US)",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "United States",
note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
}