Germanium selenide as a negative inorganic resist for ion beam microfabrication

K. Balasubramanyam; I. Adesida; A. L. Ruoff; E. D. Wolf

doi:10.1016/S0026-2692(83)80167-0

Germanium selenide as a negative inorganic resist for ion beam microfabrication

K. Balasubramanyam, I. Adesida, A. L. Ruoff, E. D. Wolf

Research output: Contribution to journal › Article › peer-review

Abstract

The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge_0.25Se_0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10^-5 C/cm² to 1.4×10^-6 C/cm² for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.

Original language	English (US)
Pages (from-to)	35-42
Number of pages	8
Journal	Microelectronics Journal
Volume	14
Issue number	1
DOIs	https://doi.org/10.1016/S0026-2692(83)80167-0
State	Published - 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2692(83)80167-0

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title = "Germanium selenide as a negative inorganic resist for ion beam microfabrication",

abstract = "The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge0.25Se0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10-5 C/cm2 to 1.4×10-6 C/cm2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.",

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T1 - Germanium selenide as a negative inorganic resist for ion beam microfabrication

AU - Balasubramanyam, K.

AU - Adesida, I.

AU - Ruoff, A. L.

AU - Wolf, E. D.

PY - 1983

Y1 - 1983

N2 - The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge0.25Se0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10-5 C/cm2 to 1.4×10-6 C/cm2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.

AB - The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge0.25Se0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10-5 C/cm2 to 1.4×10-6 C/cm2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.

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Germanium selenide as a negative inorganic resist for ion beam microfabrication

Abstract

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