Generation of Interface States by Hot Hole Injection in MOSFET's

Helmuth Gesch, Jean Pierre Leburton, Gerhard E. Dorda

Research output: Contribution to journalArticle

Abstract

The emission of hot electrons and hot holes from n-channel MOSFET's into the gate oxide is investigated as a function of the gate bias for a given lateral electric field. The resulting electron gate current as well as the substrate current are analyzed for both the saturation and the linear regime of the transistor. In the saturation regime, a remarkable increase of interface states occurs which can be correlated with the hole generation due to avalanche multiplication in the high-field region. In this case, the electric field normal to the Si-SiO//2 interface near the drain aids in the injection of hot holes along the channel which initiates acceptor-type interface states. In the linear operation regime, however, no pronounced generation of interface states can be detected.

Original languageEnglish (US)
Pages (from-to)913-918
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume29
Issue number5
DOIs
StatePublished - May 1982

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Interface states
Electric fields
Hot electrons
Oxides
Transistors
Electrons
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Generation of Interface States by Hot Hole Injection in MOSFET's. / Gesch, Helmuth; Leburton, Jean Pierre; Dorda, Gerhard E.

In: IEEE Transactions on Electron Devices, Vol. 29, No. 5, 05.1982, p. 913-918.

Research output: Contribution to journalArticle

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