Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

John A. Rogers; Kateri E. Paul; Rebecca J. Jackman; George M. Whitesides

doi:10.1116/1.589836

Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

John A. Rogers, Kateri E. Paul, Rebecca J. Jackman, George M. Whitesides

Research output: Contribution to journal › Article › peer-review

Abstract

This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating ∼90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist.

Original language	English (US)
Pages (from-to)	59-68
Number of pages	10
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	1
DOIs	https://doi.org/10.1116/1.589836
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589836

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abstract = "This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating ∼90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist.",

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AB - This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating ∼90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist.

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Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

Abstract

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