General theory of the transverse dielectric constant of III-V semiconducting compounds

Research output: Contribution to journalArticle

Abstract

We have developed a general model of the transverse dielectric constant of III-V compounds using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In our method we partition the Brillouin zone into three regions by expanding the energy bands and matrix elements about the X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, we are able to get good insight into the dependence of the dielectric constant on the shape of the band structure. Hence, it is seen that the X and L regions contribute 9095 % and the region only 510 % to the zero-frequency dielectric constant. In general, our results for 1(0) and 2() agree well with the experimental data.

Original languageEnglish (US)
Pages (from-to)5177-5184
Number of pages8
JournalPhysical Review B
Volume32
Issue number8
DOIs
StatePublished - Jan 1 1985

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permittivity
partitions
Brillouin zones
pseudopotentials
energy bands
symmetry
matrices

ASJC Scopus subject areas

  • Condensed Matter Physics

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General theory of the transverse dielectric constant of III-V semiconducting compounds. / Kahen, K. B.; Leburton, Jean-Pierre.

In: Physical Review B, Vol. 32, No. 8, 01.01.1985, p. 5177-5184.

Research output: Contribution to journalArticle

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