General model of the transverse dielectric constant of GaAs-AlAs superlattices

K. B. Kahen, Jean-Pierre Leburton, K. Hess

Research output: Contribution to journalArticle

Abstract

A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.

Original languageEnglish (US)
Pages (from-to)289-294
Number of pages6
JournalSuperlattices and Microstructures
Volume1
Issue number4
DOIs
StatePublished - 1985

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Superlattices
superlattices
Permittivity
permittivity
Band structure
Crystal symmetry
valleys
aluminum gallium arsenides
gallium arsenide
periodic variations
Anisotropy
fine structure
Polarization
trends
anisotropy
symmetry
polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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General model of the transverse dielectric constant of GaAs-AlAs superlattices. / Kahen, K. B.; Leburton, Jean-Pierre; Hess, K.

In: Superlattices and Microstructures, Vol. 1, No. 4, 1985, p. 289-294.

Research output: Contribution to journalArticle

@article{43bb2fdbcad3462198e81be2d44eb6bc,
title = "General model of the transverse dielectric constant of GaAs-AlAs superlattices",
abstract = "A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.",
author = "Kahen, {K. B.} and Jean-Pierre Leburton and K. Hess",
year = "1985",
doi = "10.1016/0749-6036(85)90088-6",
language = "English (US)",
volume = "1",
pages = "289--294",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4",

}

TY - JOUR

T1 - General model of the transverse dielectric constant of GaAs-AlAs superlattices

AU - Kahen, K. B.

AU - Leburton, Jean-Pierre

AU - Hess, K.

PY - 1985

Y1 - 1985

N2 - A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.

AB - A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.

UR - http://www.scopus.com/inward/record.url?scp=0022305763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022305763&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(85)90088-6

DO - 10.1016/0749-6036(85)90088-6

M3 - Article

AN - SCOPUS:0022305763

VL - 1

SP - 289

EP - 294

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4

ER -