Abstract
A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 289-294 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 1 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1985 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
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General model of the transverse dielectric constant of GaAs-AlAs superlattices. / Kahen, K. B.; Leburton, Jean-Pierre; Hess, K.
In: Superlattices and Microstructures, Vol. 1, No. 4, 1985, p. 289-294.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - General model of the transverse dielectric constant of GaAs-AlAs superlattices
AU - Kahen, K. B.
AU - Leburton, Jean-Pierre
AU - Hess, K.
PY - 1985
Y1 - 1985
N2 - A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.
AB - A general model of the transverse dielectric constant of GaAs-AlAs superlattices is presented. The model is based on treating separately the individual contributions from the Λ, X, and L valleys, enabling us to understand better the general trends of the overall dielectric constant. An accurate k·p band calculation is used to determine the bulk band structure around the three symmetry points and a realistic Kronig-Penney model is used to calculate the influence of the superlattice periodicity on the bulk band structure. The resulting dielectric constant shows a small polarization effect due to the anisotropy of the superstructure and a large amount of fine structure corresponding to different transitions between the quantized levels. The influence of the barrier and well thicknesses, LB and LZ, respectively, is also important and it is shown that for a constant value of x=LB/(LB+LZ), the real part of the zero frequency dielectric constant increases as a function of LB. Finally, the real parts of the dielectric constants of a superlattice and the corresponding AlGaAs alloy, characterized by the same value of x, are compared and it is found that at zero frequency the superlattice dielectric constant is slightly larger with the difference increasing for higher frequencies.
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U2 - 10.1016/0749-6036(85)90088-6
DO - 10.1016/0749-6036(85)90088-6
M3 - Article
AN - SCOPUS:0022305763
VL - 1
SP - 289
EP - 294
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 4
ER -