Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

W. P. Bai; N. Lu; A. Ritenour; M. L. Lee; D. A. Antoniadis; D. L. Kwong

doi:10.1109/LED.2006.870242

Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

W. P. Bai, N. Lu, A. Ritenour, M. L. Lee, D. A. Antoniadis, D. L. Kwong

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we report successful fabrication of Germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO₂ dielectric (equivalent oxide thickness ∼ 10.8 Å) and TaN gate electrode. The highest peak mobility (330 cm²/V·s) and saturated drive current (130 μA/sq at V_g-V_t = 1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5× enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.

Original language	English (US)
Pages (from-to)	175-178
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	27
Issue number	3
DOIs	https://doi.org/10.1109/LED.2006.870242
State	Published - Mar 2006
Externally published	Yes

Keywords

Ammonia treatment
Germanium (Ge)
Hafnium oxide
High-κ dielectric
MOSFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2006.870242

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title = "Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate",

abstract = "In this letter, we report successful fabrication of Germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO2 dielectric (equivalent oxide thickness ∼ 10.8 {\AA}) and TaN gate electrode. The highest peak mobility (330 cm2/V·s) and saturated drive current (130 μA/sq at Vg-Vt = 1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5× enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.",

keywords = "Ammonia treatment, Germanium (Ge), Hafnium oxide, High-κ dielectric, MOSFET",

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year = "2006",

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language = "English (US)",

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T1 - Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

AU - Bai, W. P.

AU - Lu, N.

AU - Ritenour, A.

AU - Lee, M. L.

AU - Antoniadis, D. A.

AU - Kwong, D. L.

PY - 2006/3

Y1 - 2006/3

N2 - In this letter, we report successful fabrication of Germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO2 dielectric (equivalent oxide thickness ∼ 10.8 Å) and TaN gate electrode. The highest peak mobility (330 cm2/V·s) and saturated drive current (130 μA/sq at Vg-Vt = 1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5× enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.

AB - In this letter, we report successful fabrication of Germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO2 dielectric (equivalent oxide thickness ∼ 10.8 Å) and TaN gate electrode. The highest peak mobility (330 cm2/V·s) and saturated drive current (130 μA/sq at Vg-Vt = 1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5× enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.

KW - Ammonia treatment

KW - Germanium (Ge)

KW - Hafnium oxide

KW - High-κ dielectric

KW - MOSFET

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JF - IEEE Electron Device Letters

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Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

Abstract

Keywords

ASJC Scopus subject areas

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