Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode

W. P. Bai; N. Lu; J. Liu; A. Ramirez; D. L. Kwong; D. Wristers; A. Ritenour; L. Lee; D. Antoniadis

Ge MOS Characteristics with CVD HfO₂ Gate Dielectrics and TaN Gate Electrode

W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee, D. Antoniadis

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO₂ gate dielectrics and TaN gate electrode. Using the newly developed pregate cleaning and NH₃-based Ge surface passivation, the TaN/HfO₂/Ge gate stack with EOT of 12.9Å exhibits excellent leakage current density of 6mA/cm² @Vg=1V and interface state density (D_it) of 8×10 ¹⁰/cm²-eV. Both D_it and CV hysteresis of Ge MOS are improved significantly with NH₃ surface treatment. We also study the effects of post-deposition anneal and investigate the conduction mechanism of TaN/HfO₂/Ge gate stack.

Original language	English (US)
Pages (from-to)	121-122
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - 2003
Externally published	Yes
Event	2003 Symposium on VLSI Technology - Kyoto, Japan Duration: Jun 10 2003 → Jun 12 2003

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Electrical and Electronic Engineering

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@article{65244b8e84184559a3563f6fe4c0a8a7,

title = "Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode",

abstract = "In this paper, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pregate cleaning and NH3-based Ge surface passivation, the TaN/HfO2/Ge gate stack with EOT of 12.9{\AA} exhibits excellent leakage current density of 6mA/cm2 @Vg=1V and interface state density (Dit) of 8×10 10/cm2-eV. Both Dit and CV hysteresis of Ge MOS are improved significantly with NH3 surface treatment. We also study the effects of post-deposition anneal and investigate the conduction mechanism of TaN/HfO2/Ge gate stack.",

author = "Bai, {W. P.} and N. Lu and J. Liu and A. Ramirez and Kwong, {D. L.} and D. Wristers and A. Ritenour and L. Lee and D. Antoniadis",

note = "Funding Information: We acknowledge support provided by the MARCO Materials, Structures and Devices Focus Research Center.; 2003 Symposium on VLSI Technology ; Conference date: 10-06-2003 Through 12-06-2003",

year = "2003",

language = "English (US)",

pages = "121--122",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode

AU - Bai, W. P.

AU - Lu, N.

AU - Liu, J.

AU - Ramirez, A.

AU - Kwong, D. L.

AU - Wristers, D.

AU - Ritenour, A.

AU - Lee, L.

AU - Antoniadis, D.

N1 - Funding Information: We acknowledge support provided by the MARCO Materials, Structures and Devices Focus Research Center.

PY - 2003

Y1 - 2003

N2 - In this paper, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pregate cleaning and NH3-based Ge surface passivation, the TaN/HfO2/Ge gate stack with EOT of 12.9Å exhibits excellent leakage current density of 6mA/cm2 @Vg=1V and interface state density (Dit) of 8×10 10/cm2-eV. Both Dit and CV hysteresis of Ge MOS are improved significantly with NH3 surface treatment. We also study the effects of post-deposition anneal and investigate the conduction mechanism of TaN/HfO2/Ge gate stack.

AB - In this paper, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pregate cleaning and NH3-based Ge surface passivation, the TaN/HfO2/Ge gate stack with EOT of 12.9Å exhibits excellent leakage current density of 6mA/cm2 @Vg=1V and interface state density (Dit) of 8×10 10/cm2-eV. Both Dit and CV hysteresis of Ge MOS are improved significantly with NH3 surface treatment. We also study the effects of post-deposition anneal and investigate the conduction mechanism of TaN/HfO2/Ge gate stack.

UR - http://www.scopus.com/inward/record.url?scp=0141538316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141538316&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0141538316

SN - 0743-1562

SP - 121

EP - 122

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2003 Symposium on VLSI Technology

Y2 - 10 June 2003 through 12 June 2003

ER -

Ge MOS Characteristics with CVD HfO₂ Gate Dielectrics and TaN Gate Electrode

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