Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO 2 dielectric

N. Lu; W. Bai; A. Ramirez; C. Mouli; A. Ritenour; M. L. Lee; D. Antoniadis; D. L. Kwong

doi:10.1063/1.2001757

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO ₂ dielectric

N. Lu, W. Bai, A. Ramirez, C. Mouli, A. Ritenour, M. L. Lee, D. Antoniadis, D. L. Kwong

Research output: Contribution to journal › Article › peer-review

Abstract

We report a study on Ge diffusion and its impact on the electrical properties of TaN/HfO ₂/Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO ₂ formed at the HfO ₂/Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH ₃ nitridation has resulted in improved electrical properties of TaN/HfO ₂/Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion.

Original language	English (US)
Article number	051922
Journal	Applied Physics Letters
Volume	87
Issue number	5
DOIs	https://doi.org/10.1063/1.2001757
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2001757

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Cite this

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title = "Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO 2 dielectric",

abstract = "We report a study on Ge diffusion and its impact on the electrical properties of TaN/HfO 2/Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO 2 formed at the HfO 2/Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH 3 nitridation has resulted in improved electrical properties of TaN/HfO 2/Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion.",

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T1 - Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO 2 dielectric

AU - Lu, N.

AU - Bai, W.

AU - Ramirez, A.

AU - Mouli, C.

AU - Ritenour, A.

AU - Lee, M. L.

AU - Antoniadis, D.

AU - Kwong, D. L.

PY - 2005

Y1 - 2005

N2 - We report a study on Ge diffusion and its impact on the electrical properties of TaN/HfO 2/Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO 2 formed at the HfO 2/Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH 3 nitridation has resulted in improved electrical properties of TaN/HfO 2/Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion.

AB - We report a study on Ge diffusion and its impact on the electrical properties of TaN/HfO 2/Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO 2 formed at the HfO 2/Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH 3 nitridation has resulted in improved electrical properties of TaN/HfO 2/Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion.

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