Gate oxide reliability under ESD-like pulse stress

Research output: Contribution to journalArticle

Abstract

The reliability of very thin gate oxide under electrostatic discharge-like pulse stress is investigated. Time-dependent dielectric breakdown of gate oxide with thicknesses ranging from 2.2 to 4.7 nm is characterized down to the nanosecond time regime. The 1/E model best fits the time-to-breakdown data. Self-heating does not need to be incorporated into the time-to-breakdown model. The oxide trap generation rate is a function of the stress pulse-width for nanosecond and microsecond stress pulses.

Original languageEnglish (US)
Pages (from-to)1528-1532
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number9
DOIs
StatePublished - Sep 1 2004

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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