Gate oxide reliability under ESD-like pulse stress

Research output: Contribution to journalArticle

Abstract

The reliability of very thin gate oxide under electrostatic discharge-like pulse stress is investigated. Time-dependent dielectric breakdown of gate oxide with thicknesses ranging from 2.2 to 4.7 nm is characterized down to the nanosecond time regime. The 1/E model best fits the time-to-breakdown data. Self-heating does not need to be incorporated into the time-to-breakdown model. The oxide trap generation rate is a function of the stress pulse-width for nanosecond and microsecond stress pulses.

Original languageEnglish (US)
Pages (from-to)1192-1196
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number7
DOIs
StatePublished - Jul 1 2004

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Oxides
Electrostatic discharge
Electric breakdown
Heating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Gate oxide reliability under ESD-like pulse stress. / Wu, Jie; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 7, 01.07.2004, p. 1192-1196.

Research output: Contribution to journalArticle

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