Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

K. Henson, H. Bu, M. H. Na, Y. Liang, U. Kwon, S. Krishnan, J. Schaeffer, R. Jha, N. Moumen, R. Carter, C. De Wan, R. Donaton, D. Guo, M. Hargrove, W. He, R. Mo, R. Ramachandran, K. Ramani, K. Schonenberg, Y. TsangX. Wang, M. Gribelyuk, W. Yan, J. Shepard, E. Cartier, M. Frank, E. Harley, R. Arndt, R. Knarr, T. Bailey, B. Zhang, K. Wong, T. Graves-Abe, E. Luckowski, D. G. Park, V. Narayanan, M. Chudzik, M. Khare

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