Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

K. Henson, H. Bu, M. H. Na, Y. Liang, U. Kwon, S. Krishnan, J. Schaeffer, R. Jha, N. Moumen, R. Carter, C. De Wan, R. Donaton, D. Guo, M. Hargrove, W. He, R. Mo, R. Ramachandran, K. Ramani, K. Schonenberg, Y. TsangX. Wang, M. Gribelyuk, W. Yan, J. Shepard, E. Cartier, M. Frank, E. Harley, R. Arndt, R. Knarr, T. Bailey, B. Zhang, K. Wong, T. Graves-Abe, E. Luckowski, D. G. Park, V. Narayanan, M. Chudzik, M. Khare

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CMOS devices with high- k / metal gate stacks have been fabricated using a gate-first process flow and conventional stressors at gate lengths of 25nm, highlighting the scalability of this approach for high performance SOI CMOS technology. AC drive currents of 1630μA/μm and 1190μA/μm have been demonstrated in 45nm groundrules at 1V and 200nA/μm off current for nFETs and pFETs, at a Tinv of 14Å and 15Å respectively. The drive currents were achieved using a simplified high- k / metal gate integration scheme with embedded SiGe and dual stress liners (DSL) and without utilizing additional stress enhancers. Devices have been fabricated with Tinv's down to 12Å and 10.5Å demonstrating the scalability of this approach for 32nm and beyond.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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