Gate Current in AlInAs/GalnAs Heterostructure Insulated-Gate Field-Effect Transistors (HIGFET’s)

Mikio Kamada, Hideto Ishikawa, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

A self-aligned WSi gate heterostructure insulated- gate field-effect transistor (HIGFET) with a gate length of 1 pm was fabricated using an AlInAs / GalnAs heterostructure grown by atmospheric pressure metalorganic chemical vapor deposition (MOCYD). The gate current is investigated experimentally and theoretically. The measured gate current was found to be about two orders of magnitude higher than predicted by theory. The origin of this increase is unclear. However, the theoretical result suggests the possibility of reducing the gate current in AlInAs/GalnAs HIGFET’s.

Original languageEnglish (US)
Pages (from-to)1358-1363
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume40
Issue number8
DOIs
StatePublished - Aug 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Gate Current in AlInAs/GalnAs Heterostructure Insulated-Gate Field-Effect Transistors (HIGFET’s)'. Together they form a unique fingerprint.

Cite this