Abstract
A self-aligned WSi gate heterostructure insulated- gate field-effect transistor (HIGFET) with a gate length of 1 pm was fabricated using an AlInAs / GalnAs heterostructure grown by atmospheric pressure metalorganic chemical vapor deposition (MOCYD). The gate current is investigated experimentally and theoretically. The measured gate current was found to be about two orders of magnitude higher than predicted by theory. The origin of this increase is unclear. However, the theoretical result suggests the possibility of reducing the gate current in AlInAs/GalnAs HIGFET’s.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1358-1363 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 40 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering