GaN MOSHEMT using sputtered-gate-SiO₂ and post-annealing treatment

Keyphrases

• Silica 100%
• Post-annealing 100%
• GaN MOSHEMT 100%
• Breakdown Voltage 66%
• High Performance 33%
• Drain Current 33%
• Epilayer 33%
• AlGaN-GaN 33%
• MOS-HEMT 33%
• GaN HEMT 33%
• Electron Mobility 33%
• Oxygen Compensation 33%
• RF Magnetron Sputtering 33%
• Voltage Performance 33%
• Breakdown Field 33%
• Gas Environment 33%
• 2D Electron Gas (2DEG) 33%
• Electron Concentration 33%

Material Science

• Annealing 100%
• Magnetron Sputtering 50%
• Epilayers 50%