@inproceedings{d7fb4f7b6c3041159b497c24d1be341a,
title = "GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment",
abstract = "By using RF magnetron sputtering with oxygen compensation in the gas environment, high-quality SiO2-on-GaN with breakdown field of 9.6 MV/cm was achieved. A post-annealing treatment was further developed to remove the sputtering-induced epilayer damage, which not only recovered, but improved the electron concentration and mobility of the 2-D electron gas by 21.7\% and 5.5\%, respectively. High-performance SiO2/AlGaN/GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. The breakdown voltage performance is among the best of GaN-based HEMTs or MOSHEMTs reported to date.",
keywords = "Breakdown voltage, GaN MOSHEMT, Post-annealing, Sputtered-SiO",
author = "Liang Pang and Yaguang Lian and Kim, \{Dong Seok\} and Lee, \{Jung Hee\} and Kyekyoon Kim",
year = "2013",
language = "English (US)",
isbn = "1893580210",
series = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
pages = "387--390",
booktitle = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
note = "28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 ; Conference date: 13-05-2013 Through 16-05-2013",
}