GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment

Liang Pang, Yaguang Lian, Dong Seok Kim, Jung Hee Lee, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By using RF magnetron sputtering with oxygen compensation in the gas environment, high-quality SiO2-on-GaN with breakdown field of 9.6 MV/cm was achieved. A post-annealing treatment was further developed to remove the sputtering-induced epilayer damage, which not only recovered, but improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. High-performance SiO2/AlGaN/GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. The breakdown voltage performance is among the best of GaN-based HEMTs or MOSHEMTs reported to date.

Original languageEnglish (US)
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages387-390
Number of pages4
StatePublished - Nov 15 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: May 13 2013May 16 2013

Publication series

Name2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

Other

Other28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period5/13/135/16/13

Keywords

  • Breakdown voltage
  • GaN MOSHEMT
  • Post-annealing
  • Sputtered-SiO

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Pang, L., Lian, Y., Kim, D. S., Lee, J. H., & Kim, K. (2013). GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 (pp. 387-390). (2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013).