GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment

Liang Pang, Yaguang Lian, Dong Seok Kim, Jung Hee Lee, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By using RF magnetron sputtering with oxygen compensation in the gas environment, high-quality SiO2-on-GaN with breakdown field of 9.6 MV/cm was achieved. A post-annealing treatment was further developed to remove the sputtering-induced epilayer damage, which not only recovered, but improved the electron concentration and mobility of the 2-D electron gas by 21.7% and 5.5%, respectively. High-performance SiO2/AlGaN/GaN MOSHEMT was thus fabricated, which exhibited a maximum drain current of 594 mA/mm and a breakdown voltage of 205 V at the gate-drain distance of 2 μm. The breakdown voltage performance is among the best of GaN-based HEMTs or MOSHEMTs reported to date.

Original languageEnglish (US)
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages387-390
Number of pages4
StatePublished - 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: May 13 2013May 16 2013

Other

Other28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period5/13/135/16/13

Fingerprint

Electric breakdown
Annealing
Electron gas
Epilayers
Drain current
High electron mobility transistors
Magnetron sputtering
Sputtering
Oxygen
Electrons
Gases
Compensation and Redress

Keywords

  • Breakdown voltage
  • GaN MOSHEMT
  • Post-annealing
  • Sputtered-SiO

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Pang, L., Lian, Y., Kim, D. S., Lee, J. H., & Kim, K. (2013). GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 (pp. 387-390)

GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. / Pang, Liang; Lian, Yaguang; Kim, Dong Seok; Lee, Jung Hee; Kim, Kyekyoon.

2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. p. 387-390.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pang, L, Lian, Y, Kim, DS, Lee, JH & Kim, K 2013, GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. in 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. pp. 387-390, 28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013, New Orleans, LA, United States, 5/13/13.
Pang L, Lian Y, Kim DS, Lee JH, Kim K. GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. p. 387-390
Pang, Liang ; Lian, Yaguang ; Kim, Dong Seok ; Lee, Jung Hee ; Kim, Kyekyoon. / GaN MOSHEMT using sputtered-gate-SiO2 and post-annealing treatment. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. pp. 387-390
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